Търсене за IR

IR 70HF80 DO-5
Диод 70HF80 DO-5
Код: IR 70HF80 DO-5
SI-DI 800V 70A;IR 70HF80 CAN DIODE FAST REC 800V 70A DO-5 RH =70HFL80S05 DIODE FAST REC 800V 70A DO203AB 70HFL80S05;
IR2113S SO-16
Интегр.схема IR2113SPBF SO-16
Код: IR2113S SO-16
IC: driver; MOSFET; SO16; 2A; 625,3V ;HALF-BRIDGE DRIVER, Floating channel designed for bootstrap operationFully operational to +600VTolerant to negative transient voltagedV/dt immune• Gate drive supply range from 10 to 20V;
IRFB4310  TO-220
Транзистор IRFB4310 TO-220
Код: IRFB4310 TO-220
MOS-N-FET Vdss=100V Id=140A Rds(on)=5.6mR 330W ALSO:TK80E08K3;IRFB4110 ;
IRFSL11N50A TO-263
Транзистор IRFSL11N50A
Код: IRFSL11N50A TO-263
MOS-N-FET 500V 11A 190W <0.55om(6.6A),TO-262/D2-Pak,FSL1N50A IR;
IR2105S SO-8
Интегр.схема IR2105S SO-8
Код: IR2105S SO-8
Half Bridge Driver, Single Input, All High Voltage Pins on One Side, Fixed 520ns Deadtime in a 8-pin SMD Package;
IRS21850 SO-8
Интегр.схема IRS21850 SO-8
Код: IRS21850 SO-8
SINGLE HIGH SIDE DRIVER IC;:USE IN Y-SUS EBR61018103 ;:NEW;
IRF7313 SO-8
Транзистор IRF7313 8-MDIP
Код: IRF7313 SO-8
MOS-N-FET Dual,LogL,30V 6.5A R-29mom(5.8A),17/43ns,8-MDIP,IR/F7313;
IRF630N TO-220
Транзистор IRF630N TO-220
Код: IRF630N TO-220
MOS-N-FET Vdss=200V Id=9.5A Rds(on)=0.30R 82W;BUZ 31..32,2SK 459,2SK 925,2SK 1393;
IRFBE30 TO-220
Транзистор IRFBE30 TO-220
Код: IRFBE30 TO-220
MOS-N-FET Vdss=800V Id=4.1A Rds(on)=3.0R 125W;
STRA6351A IRIS-A6351 DIP-8
Интегр.схема STRA6351A IRIS-A6351 DIP-8
Код: STRA6351A IRIS-A6351 DIP-8
INTEGRATED SWITCHER;: STB Power supply IC ;:NEW;
IRFU4104 TO-251
Транзистор IRFU4104 TO-251
Код: IRFU4104 TO-251
MOS-N-FET Vdss=40V Id=42A Rds(on)=5.5mR 140W;
IRG4PC40F  TO-247
Транзистор IRG4PC40F TO-247
Код: IRG4PC40F TO-247
MOS-N-IGBT N-Ch DUAL Vces=600V Ic=49A 160W ALSO:MGW30N60,IRG4PC40WPBF;
IRFB52N15D TO-220
Транзистор IRFB52N15D
Код: IRFB52N15D TO-220
MOS-N-FET 150V 60A 320W <0.032om(48A) TO-220, SAME AS: FB52N15D;8657980 Farnell IRFB5620PbF, irfb5615pbf, irfb59n10dpbf ;BUZ102S, SPP52N05;
On request
IRFB18N50K TO-220
Транзистор IRFB18N50K TO-220
Код: IRFB18N50K TO-220
MOS-N-FET Vdss=500V Id=17A Rds(on)=0.29R 220W ;
IRFZ34NS TO-263
ТранзисторIRFZ34NS TO-263
Код: IRFZ34NS TO-263
MOS-N-FET Vdss=55V Idss=29A Rds(on)=0.040R 68W ;
On request
IRFBG30 TO-220
Транзистор IRFBG30 TO-220
Код: IRFBG30 TO-220
MOS-N-FET Vdss=1000V Id=3.1A Rds(on)=5.0R 125W;IRFBG30;BUK456-1000;
On request
IRFIZ44N TO-220F
Транзистор IRFIZ44N TO-220F
Код: IRFIZ44N TO-220F
MOS-N-FET Vdss=60V Idss=30A Rds(on)=0.028R 48W;
On request
IRG4BC40U TO-220
Транзистор IRG4BC40U TO-220
Код: IRG4BC40U TO-220
MOS-N-IGBT N-Ch DUAL Vces=600V Ic=20A 160W ULTRAFAST SPEED IGBT;
IRF530 TO-220
Транзистор IRF530 TO-220
Код: IRF530 TO-220
MOS-N-FET Vdss=100V Idss=14A Rds(on)=0.16R 88W;
On request
IRL3803 TO-220
Транзистор IRL3803 TO-220
Код: IRL3803 TO-220
MOS-N-FET 30V 140A Rds on 0.006ohm 150W ;
On request
IRLR8726 TO-252D2PAK
Транзистор IRLR8726 TO-252D2PAK
Код: IRLR8726 TO-252D2PAK
MOS-N-FET Vdss=30V Idss=61A Rds(on)=5.8mR 75W;
IRFB3077PBF TO-220
Транзистор IRFB3077PBF TO-220
Код: IRFB3077PBF TO-220
MOS-N-FET Vdss=75V Idss=120A Rds(on)=3.3mR 370W;
On request
IRF1010NS  TO-263
Транзистор IRF1010NS TO-263
Код: IRF1010NS TO-263
MOS-N-FET Vdss=55V Id=85A Rds(on)=11mR 180W;
IRL2910SZ TO-263
Транзистор IRL2910SZ TO-263
Код: IRL2910SZ TO-263
MOS-N-FET, N-Channel, 100V, 0.026Ω, 48A, TO-263 ; SAME AS ON5173 118 ;
On request
IRFI1010N TO-220F
Транзистор IRFI1010NPBF TO-220F
Код: IRFI1010N TO-220F
MOS-N-FET 55V 44A R<0.016om(25A) 47W TO-220F;
IRF7424 SO-8
Транзистор IRF7424 SO-8
Код: IRF7424 SO-8
MOS-P-FET Vdss=-30V Id=-11A Rds(on)=0.02R;2.5W, 8-MDIP;
IRF7478Q SO-8
Транзистор IRF7478Q SO-8
Код: IRF7478Q SO-8
MOS-P-FET Vdss=-60V 60V,7A,23mom(4.2A),2.5W,8-MDIP/SO,IR/F7478;
IGBT IRG7SC28U TO-D2PACK
Транзистор IGBT IRG7SC28U TO-D2PACK
Код: IGBT IRG7SC28U TO-D2PACK
MOS-N-IGBT N-Ch DUAL Vces=600V 225A(25°C)/20A(100°C) 171W SMPS SERIES;
IRF3709 TO-220
Транзистор IRF3709 TO-220
Код: IRF3709 TO-220
MOS-N-FET Vdss=30V Id=90A Rds(on)=9mR 120W;
IGBT IRGB6B60KD TO-220
Транзистор IGBT IRGB6B60KD TO-220
Код: IGBT IRGB6B60KD TO-220
MOS-N-IGBT N-Ch+DIODE DUAL Vces=600V Ic=13A 90W ;INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE;