Търсене за RENESAS

On request

Код: UPC1093T TO-92

Z-IC,Voltage Regulator, Voltage - Output (Max). 36 V ; Current - Output. 100 mA ; Tolerance. ±2% ; Temperature Coefficient. 100ppm/°C;

Интегр.схема R2A20113SP SOP-8

Код: R2A20113SP SOP-8

Critical Conduction Mode PFC Control IC;

Транзистор 2SK3663 T2 A SOT-323

Код: 2SK3663 T2 A SOT-323

MOS-N-FET Vdss=20V Idss=2A RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) 0.2W; N-channel MOS Field Effect Transistor FOR Switching; pak :SC-70 (SSP); mark:G26;

Транзистор 2SK2926-ZJ

Код: 2SK2926-ZJ to-263

MOS-N-FET Vdss=60V Idss=15A RDS(ON) <55mΩ (VGS = 10V),RDS(ON) < 110mΩ (VGS = 4V) , 25W K2926 Commonly used fuel injection driver tr for Mazda;

Транзистор IGBT RJP63K2 TO-263

Код: IGBT RJP63K2 TO-263

MOS-N-IGBT N-Ch Vces=630V Ic=35A 25W;

On request

Интегр.схема R2S15900SP

Код: R2S15900SP SOP

2ch Electronic Volume with Surround; The R2S15900SP is an optimum audio signal processor IC for TV. It has a 5ch input selector, surround/pseudo stereo, tone control(2band), output gain control and 2ch master volume. It can control all of these functions with I2C bus.;

Интегр.схема M62444FP SSOP-42

Код: M62444FP SSOP-42

The M62444FP is 4 channels electric volume with trimmer controlled 3-wire serial data. The IC is suitable for use in home-use audio systems and TV sets;

On request

Транзистор 2SC1222 TO-92

Код: 2SC1222 TO-92

SI-N 45V 0.02A 0.25W B=100-700 more 30M;SAME AS:2SC1400,2SC1685,2SC1815;

Интегр.схема SN74LS33N DIP-14

Код: SN74LS33N DIP-14

NOR Gate, LS Series, 4-Func, 2-Input, TTL;

IGBT RJP30H2 TO-263-3L

Код: IGBT RJP30H2 TO-263-3L

IGBT RJP30H2 TO-263-3L 360V 35A 250A PEAK 60W N Channel IGBT 360V 35A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;

Транзистор RJP6006DPD TO-3P

Код: RJP6006DPD TO-3P

MOS-N-FET Vdss=600V Idss=5A Rds(on)=1.4 Ohm 77.6W RENESAS Package code: PRSS0004ZG-A;

Транзистор RJK6006 TO-252

Код: RJK6006 TO-252

MOS-N-FET 500V 6A RDS(on) = 1.4 (at ID = 2.5 A, VGS = 10 V, Ta = 25'C) High Speed Power Switching ; Low on-state resistance ;

Интегр.схема ISL98607 TQFN

Код: ISL98607 TQFN

High Efficiency Power Supply for Small Size Displays;

Транзистор RJP4055DPP TO-220F

Код: RJP4055DPP TO-220F

MOS-N-FET 400V 40A;

Транзистор IGBT RJP4584 TO-220F

Код: IGBT RJP4584 TO-220F

(35A,450V)TO-220;

Интегр.схема ISL24837IRZ-T13 QFN32

Код: ISL24837IRZ-T13 QFN32

8-Channel Programmable I2C TFT-LCD Reference Voltage Generator With Band Gap Trimmed Reference, 4-Channel Programmable Amps With Negative Feedback Inputs, 1-Channel VCOM Op Amp, Integ. VCOM Calibrator And 2 Banks Of Integ. EEPROM The ISL24837 is an 8-Channel programmable reference voltage generator with band gap trimmed reference, 4-Channel programmable;

Интегр.схема HD74LS48P DIP-16

Код: HD74LS48P DIP-16

BCD-to-Seven-Segment Decoder / Driver (Internal Pull-up outputs);

Интегр.схема R2A15908SP

Код: R2A15908SP SOP-28

5 Input Selector 2ch Electronic Volume with Tone & Surround;

Интегр.схема 74LS445N DIP-16

Код: 74LS445N DIP-16

BCD to Decimal Decoders/Drivers ;

Интегр.схема 71256SA25TP DIP-24

Код: 71256SA25TP DIP-24

SRAM 256K(32KX8) high-speed CMOS static RAM DIP28 ;

IGBT RJP30H1 TO-220F

Код: IGBT RJP30H1 TO-220F

IGBT 360V 30A 250A PEAK 40W N Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;