Part Number = 2SJ176
Manufacturer Name = Hitachi Semiconductor
Average Price = 12.17454
Description = P-Channel Enhancement MOSFET - High speed switching
V(BR)DSS (V) = 60
V(BR)GSS (V) = 20
I(D) Abs. Drain Current (A) = 15
I(DM) Max (A)(@25°C) = 60
@Pulse Width (s) (Condition) = 10u
Absolute Max. Power Diss. (W) = 30
V(GS)th Max. (V) = 2.0
V(GS)th Min. (V) = 1.0
@(VDS) (V) (Test Condition) = 10
@I(D) (A) (Test Condition) = 1m
I(DSS) Max. (A) = 250u
@V(DS) (V) (Test Condition) = 50
@Temp (°C) (Test Condition) = 25
I(GSS) Max. (A) = 10u
@V(GS) (V) (Test Condition) = 16
r(DS)on Max. (Ohms) = 170m
@V(GS) (V) (Test Condition) = 4
@I(D) (A) (Test Condition) = 8
g(fs) Min. (S) Trans. conduct. = 6.0
g(fs) Max, (S) Trans. conduct, = 9.5
@V(DS) (V) (Test Condition) = 10
@I(D) (A) (Test Condition) = 8
C(iss) Max. (F) = 1400p
@V(DS) (V) (Test Condition) = 10
@Freq. (Hz) (Test Condition) = 1M
td(on) Max (s) On time delay = 15n
t(r) Max. (s) Rise time = 120n
t(d)off Max. (s) Off time = 220n
t(f) Max. (s) Fall time. = 160n
Package = TO-220var
Military = N