Photodiodes

PH302 Photodiode with PIN structure 32V 150mW 940nm;

PHOTODIODE 2Ф1065 2F1065 is a specialized p-i-n photodiode;

Maximum reverse voltage:5 [V] Wavelength at peak sensitivity:850 [nm] Mounting:THT Overall dimensions:11x6x3 [mm] Operating temperature:-25~85 [°C] ;

Operating spectral range: Typically covers the visible and near infrared (IR) region — from 400 nm to 1100 nm Operating voltage (Reverse breakdown voltage Ubr: To operate in avalanche multiplication mode, this type of diode requires a relatively high supply voltage, which, depending on the specific modification, varies between 80V and 200V. Avalanche Multiplication Factor (M): Ensures an internal amplification of the photocurrent from 10 to 100+ times (depending on bias voltage and temperature). Rise time: Extremely fast components operating in the nanosecond or sub-nanosecond range, suitable for recording very short laser or optical pulses. ;

LIGHT EMITTING DIODE INFRARED TO18 ;

PHOTO DIODE TFK BPW41;

PHOTO DIODE PH309;