phototransistor (photodetector)
technical specifications:
Structure: n-p-n, Peak sensitivity (wavelength): 750–870 nm (infrared spectrum, but also responds excellently to white light), Collector-emitter voltage: 32 V, Dark current: 100 nA, Light current (photocurrent): 1–6.3 mA (at Uce=5V and illuminance E=1000 lx), Package: TO-18 for through-hole mounting (THT).,