Transistors

AOD413 TO-252

Код: AOD413 TO-252

MOS-N-FET 40V 12A 50W;

AOD454 TO-252

Код: AOD454 TO-252

MOS-N-FET 40V 12A 20W;

BU508AXI TO-220F

Код: BU508AXI TO-220F

SI-N 1500V 8A 40W 0.7us ISO220 ;

CEP603AL TO-220

Код: CEP603AL TO-220

MOS-N-FET 30V 25A 60W;

FDB2532 D2 PAK TO-263

Код: FDB2532 D2 PAK TO-263

MOS-N-FET Vdss=150V Idss=79A Rds(on)=16mR 310W; ;MOS-N-FET 150V 79A 310W;

FDB3632 TO-263 D2 PACK

Код: FDB3632 TO-263 D2 PACK

MOS- N-FET 100V 80A 310W;

GT45F122 TO-220F

Код: GT45F122 TO-220F

GT45F122 TO-220F;IGBT 300V 200A USE FOR Y-SUS LG EAX60764001;

IGBT FGPF4633 TO-220F

Код: IGBT FGPF4633 TO-220F

IGBT N-Ch FGPF4633 TO-220F; 330V 70A (300A PULSE) NEW LG PDP 60";

IGBT RJP30H1 TO-220F

Код: IGBT RJP30H1 TO-220F

IGBT N-Ch 360V 30A 250A PEAK 40W N Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;

IGBT RJP30H2 TO-263-3L

Код: IGBT RJP30H2 TO-263-3L

IGBT RJP30H2 TO-263-3L 360V 35A 250A PEAK 60W N Channel IGBT 360V 35A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;

IPB048N15N5 TO-263

Код: IPB048N15N5 TO-263 desoldering

MOS-N-FET 150V 120A 300W;

IRFS3006 D2-PACK TO-263

Код: IRFS3006 D2-PACK TO-263

MOS-N-FET 60V 195A 375W;

IRFS4115P D2 PAC TO-263

Код: IRFS4115P D2 PAC TO-263

MOS- N-FET 150V 99A 375W ID MAX 195A;

ISL9V5036S3S TO-263

Код: IGBT ISL9V5036S3S TO-263

IGBT N-Ch 390V 46A Rg=1kOhm 250W;Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A;REPLACE GT30F131;

KD367B = BDX85C TO-3

Код: KD367B = BDX85C TO-3

SI-N-DARL 100V 8A 60W ;;KD367B = BDX85C TO-3 ; Si-P-Darl,NF/S-L,100/100V,8A,60W,7MHz,B>750,TO-3;

NTBGS4D1N15MC D2PAK7 TO-263

Код: NTBGS4D1N15MC D2PAK7 TO-263 7

MOS-N-FET 150V 185A 316W;

PSMN070-200B TO-220

Код: PSMN070-200B TO-220

MOS-N-FET 200V 35A 250W;

SMICA TO-3 ПОДЛОЖКА TO3

Код: SMICA TO-3

Heat transfer pad: mica; TO3; 0.35K/W; L: 41.5mm; W: 28.2mm;

SSM2220P-AD

Код: SSM2220P-AD

SI-P Dual 36V 20mA 0.5W 190M DIP08 ;

Tранзистор 2N2160 TO-39

Код: 2N2160 TO-18

SI-P UJT-P 30V, 0.05A, 0.45W, TO-5 = 2N1671A;Ip<25uA,Iv>8mA,TO-18;

Tранзистор 2N2905 TO-39

Код: 2N2905A TO-39

SI-P Uni 60V 0.6A 0.8W ALSO:2N2904;

Tранзистор 2SB1647 TO-3P 4N P

Код: 2SB1647 TO-3P Original

SI-P DARL 150V 15A B>5K B>5000 130W ;:USED IN DENON AMPLIFIER COMPL:2SD2560;

Tранзистор 2SC2365 TO-3 Original

Код: 2SC2365 TO-3 Original

SI-N 600V 6A 50W; since:1997 ;2SC5365;

Tранзистор 2SK3114

Код: 2SK3114 TO-220F

MOS-N-FET Vdss=600V Id==±4A Rds(on)=2.2R 30W ALSO:2SK2045, 2SK2097, 2SK2118,2SK2139, 2SK2326, 2SK2563, 2SK3049;