IBGT Транзистори

GT45F122 TO-220F
GT45F122 TO-220F
Код: GT45F122 TO-220F
GT45F122 TO-220F;IGBT 300V 200A USE FOR Y-SUS LG EAX60764001;
По заявка
IGBT FGPF4633 TO-220F
IGBT FGPF4633 TO-220F
Код: IGBT FGPF4633 TO-220F
IGBT FGPF4633 TO-220F; 330V 70A (300A PULSE) NEW LG PDP 60";
IGBT RJP30H1 TO-220F
IGBT RJP30H1 TO-220F
Код: IGBT RJP30H1 TO-220F
IGBT 360V 30A 250A PEAK 40W N Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;
IGBT RJP30H2 TO-263-3L
IGBT RJP30H2 TO-263-3L
Код: IGBT RJP30H2 TO-263-3L
IGBT RJP30H2 TO-263-3L 360V 35A 250A PEAK 60W N Channel IGBT 360V 35A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;
По заявка
IGBT ISL9V5036S3S  TO-263
ISL9V5036S3S TO-263
Код: IGBT ISL9V5036S3S TO-263
MOS-N-IGBT 390V 46A Rg=1kOhm 250W;Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A;REPLACE GT30F131;
IGBT FGA90N33A TD TO-3P
Tранзистор FGA90N33A TD TO-3P
Код: IGBT FGA90N33A TD TO-3P
MOS-N-IGBT N-Ch 330V 90A 223W;
IGBT GT30F122 TO-220F
Tранзистор IGBT 30F122
Код: IGBT GT30F122 TO-220F
IGBT 300V 200A 25W ; БЕЗ "CE" ДИОД ;
IGBT STGF7NC60HD TO-220F
Tранзистор IGBT STGF7NC60HD TO-220F
Код: IGBT STGF7NC60HD TO-220F
MOS-N-IGBT 600V 14A 25W TO-220FP/D2PAK VERY FAST POWERMESH IGBT;
IGBT STGP7NC60HD ТО-220
Tранзистор IGBT STGP7NC60HD
Код: IGBT STGP7NC60HD ТО-220
MOS-N-IGBT N-Ch Vces=600V Ic=14A 50W; ;
IRS2092 SOP-16
Интегр.схема IRS2092STRPBF
Код: IRS2092 SOP-16
IC,Audio Amplifiers Class-D,1-Channel Mono,800kHz,10-18VDC,0.5W,16-SOIC;
По заявка
IGBT IGW15N120H3 TO-3P
Транзистор 15N120
Код: IGBT IGW15N120H3 TO-3P
MOS-N-IGBT N-Ch Vces=1200V Ic=30A 217W; ,19/43nS,,G15H1203 ; Replacement:igw15n120h3 ;
По заявка
IGBT IKW15N120H3 TO-3P
Транзистор 15N120
Код: IGBT IKW15N120H3 TO-3P
MOS-N-IGBT N-Ch+DIOD Vces=1200V Ic=30A 217W;IGBT-N-MOS,L,1200V,15(30)A,217W,19/43nS,K15H1203 ; Replacement:igw15n120h3 ;
По заявка
IGBT HGTG20N60A4 TO-247
Транзистор 20N60A4D TO-247
Код: IGBT HGTG20N60A4 TO-247
IGBT SI-N Vdss=600V Id=70A 290W; SAME AS: IRGB30B60K, KGF40N60PA;
IGBT HGTG20N60A4D TO-247
Транзистор 20N60A4D TO-247
Код: IGBT HGTG20N60A4D TO-247
MOS-N-IGBT N-CH-DUAL Vdss=600V Id=70A 290W;WITH DIOD;
IGBT FSW25N50A TO-3P
Транзистор 25N50 TO-3P
Код: IGBT FSW25N50A TO-3P
MOS-N-IGBT N-Ch Vces=500V Ic=25A (Rds): 0.26 Ohm 230W REPLACEMENT: FMH25N50G;
45G124 TO-220F
Транзистор 45G124 TO-220F
Код: 45G124 TO-220F
45G124/GT45G12 MFG;
MBQ60T65PES TO-247 original
Транзистор 60T65SHD TO-247
Код: MBQ60T65PES TO-247 original
MOS-N-IGBT N-Ch+DIODE Vces=650V Ic=60A 428W MBQ60T65PES=FGH60T65SHD High Speed Fieldstop Trench IGBT; MBQ50T65FESC;
По заявка
BUL810
Транзистор BUL810
Код: BUL810
IGBT 1200V 32A WITH ANTIPARALLEL TO218;
BUP203 TO-220
Транзистор BUP203 TO-220
Код: BUP203 TO-220
MOS-N-IGBT N-Ch Vces=1000V Ic=23A 165W 70/220nS;
BUP203 TO-220
Транзистор BUP203 TO-220
Код: BUP203 TO-220
MOS-N-IGBT N-Ch Vces=1000V Ic=23A 165W 70/220nS;
BUP212 TO-220
Транзистор BUP212 TO-220
Код: BUP212 TO-220
MOS-N-IGBT N-Ch Vces=1200V Ic=22A 120W;replacement with :SGP07N120 ;
По заявка
BUP213 TO-220
Транзистор BUP213 TO-220
Код: BUP213 TO-220
MOS-N-IGBT N-Ch Vces=1200V Ic=32A 200W;ALSO:SGP15N120 ;
По заявка
BUP313D TO-218
Транзистор BUP313D TO-218
Код: BUP313D TO-218
MOS-N-IGBT N-Ch Vces=1200V Ic=32A RGE = 20 kΩ 200W;IGW40T120;G40T120,IRG4PH50S;
По заявка
BUP314 TO-218
Транзистор BUP314D TO-218
Код: BUP314 TO-218
MOS-N-IGBT N-Ch Vces=1200V Ic=52A 300W;IGW40T120;G40T120,IRG4PH50S;