Транзистори

По заявка
AOD413 TO-252
AOD413 TO-252
Код: AOD413 TO-252
MOS-N-FET 40V 12A 50W;
По заявка
AOD454 TO-252
AOD454 TO-252
Код: AOD454 TO-252
MOS-N-FET 40V 12A 20W;
BU508AXI  TO-220F
BU508AXI TO-220F
Код: BU508AXI TO-220F
SI-N 1500V 8A 40W 0.7us ISO220 ;
CEP603AL TO-220
CEP603AL TO-220
Код: CEP603AL TO-220
MOS-N-FET 30V 25A 60W;
FDB2532 D2 PAK TO-263
FDB2532 D2 PAK TO-263
Код: FDB2532 D2 PAK TO-263
MOS-N-FET 150V 79A 310W;
FDB3632 TO-263 D2 PACK
FDB3632 TO-263 D2 PACK
Код: FDB3632 TO-263 D2 PACK
MOS- N-FET 100V 80A 310W;
GT45F122 TO-220F
GT45F122 TO-220F
Код: GT45F122 TO-220F
GT45F122 TO-220F;IGBT 300V 200A USE FOR Y-SUS LG EAX60764001;
IGBT FGPF4633 TO-220F
IGBT FGPF4633 TO-220F
Код: IGBT FGPF4633 TO-220F
IGBT FGPF4633 TO-220F; 330V 70A (300A PULSE) NEW LG PDP 60";
IGBT RJP30H1 TO-220F
IGBT RJP30H1 TO-220F
Код: IGBT RJP30H1 TO-220F
IGBT 360V 30A 250A PEAK 40W N Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;
IGBT RJP30H2 TO-263-3L
IGBT RJP30H2 TO-263-3L
Код: IGBT RJP30H2 TO-263-3L
IGBT RJP30H2 TO-263-3L 360V 35A 250A PEAK 60W N Channel IGBT 360V 35A; 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max;
IPB048N15N5 TO-263
IPB048N15N5 TO-263
Код: IPB048N15N5 TO-263
MOS-N-FET 150V 120A 300W;
IRFS3006 D2-PACK TO-263
IRFS3006 D2-PACK TO-263
Код: IRFS3006 D2-PACK TO-263
MOS-N-FET 60V 195A 375W;
IRFS4115P D2 PAC TO-263
IRFS4115P D2 PAC TO-263
Код: IRFS4115P D2 PAC TO-263
MOS- N-FET 150V 99A 375W ID MAX 195A;
По заявка
IGBT ISL9V5036S3S  TO-263
ISL9V5036S3S TO-263
Код: IGBT ISL9V5036S3S TO-263
MOS-N-IGBT 390V 46A Rg=1kOhm 250W;Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A;REPLACE GT30F131;
KD367B = BDX85C TO-3
KD367B = BDX85C TO-3
Код: KD367B = BDX85C TO-3
SI-N-DARL 100V 8A 60W ;;KD367B = BDX85C TO-3 ; Si-P-Darl,NF/S-L,100/100V,8A,60W,7MHz,B>750,TO-3;
NTBGS4D1N15MC D2PAK7 TO-263 7
NTBGS4D1N15MC D2PAK7 TO-263
Код: NTBGS4D1N15MC D2PAK7 TO-263 7
MOS-N-FET 150V 185A 316W;
PSMN070-200B TO-220
PSMN070-200B TO-220
Код: PSMN070-200B TO-220
MOS-N-FET 200V 35A 250W;
SSM2220P-AD
SSM2220P-AD
Код: SSM2220P-AD
SI-P Dual 36V 20mA 0.5W 190M DIP08 ;
2N2160 TO-18
Tранзистор 2N2160 TO-39
Код: 2N2160 TO-18
SI-P UJT-P 30V, 0.05A, 0.45W, TO-5 = 2N1671A;Ip<25uA,Iv>8mA,TO-18;
2N2905A TO-39
Tранзистор 2N2905 TO-39
Код: 2N2905A TO-39
SI-P Uni 60V 0.6A 0.8W ALSO:2N2904;
По заявка
2SB1647 TO-3P Original
Tранзистор 2SB1647 TO-3P 4N P
Код: 2SB1647 TO-3P Original
SI-P DARL 150V 15A B>5K B>5000 130W ;:USED IN DENON AMPLIFIER COMPL:2SD2560;
2SC2365 TO-3 Original
Tранзистор 2SC2365 TO-3 Original
Код: 2SC2365 TO-3 Original
SI-N 600V 6A 50W; since:1997 ;2SC5365;
2SK3114 TO-220F
Tранзистор 2SK3114
Код: 2SK3114 TO-220F
MOS-N-FET Vdss=600V Id==±4A Rds(on)=2.2R 30W ALSO:2SK2045, 2SK2097, 2SK2118,2SK2139, 2SK2326, 2SK2563, 2SK3049;
2SK3767 TO-220F
Tранзистор 2SK3767 TO-220F
Код: 2SK3767 TO-220F
MOS-N-FET Vdss=600V Idss=2A Rds(on)=4.5R 25W ;